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Physics and Properties of Semiconductors: crystal structure, energy bands, statistics, Fermi level, carrier concentration at thermal equilibrium, carrier transport phenomena, Hall effect, recombination, optical and thermal properties, basic properties for semiconductor operation. Device Processing Technology: oxidation, diffusion, ion-implantation, deposition, lithography, etching and interconnect. p-n Junction: depletion region, diffusion, generation-recombination, current-voltage characteristics, junction breakdown, charge storage and transient behavior. Integrated-Circuit Technology: understanding at the level of Muller and Kamins of integrated-circuit fabrication processes. Bipolar transistor: transistor action and dependence on device structure, charge control switching model, Ebers-Moll Model, current-voltage characteristics, non-ideal and limiting effects at extremes of bias. State-of-the-Art Bipolar Transistor Technology: poly-si emitters, narrow base, structural tradeoffs in optimizing performance. Metal-Semiconductor Contacts: equilibrium, idealized metal semiconductor junctions, nonrectifying (ohmic) contacts, Schottky diodes, tunneling. Metal-Oxide-Silicon System: MOS structure, capacitance, oxide and interface charge (charging of traps, tunneling through oxide). MOS Field-Effect Transistor: threshold voltage, derivation of current-voltage characteristics, dependence on device structure. State-of-the-Art MOS Technology: small-geometry effects, mobility degradation due to channel and oxide fields, velocity saturation, hot-electron effects, device wearout mechanisms. |
- editing-lecturer: Jeremiah Onunga